Line edge roughness: experimental results related to a two-parameter model

被引：33

作者：

Leunissen, LHA

Lawrence, WG

Ercken, M

机构：

[1] IMEC, B-3001 Louvain, Belgium

[2] Shipley Co LLC, Marlborough, MA 01752 USA

来源：

MICROELECTRONIC ENGINEERING | 2004年 / 73-4卷

关键词：

line edge roughness; metrology; correlation length;

D O I：

10.1016/j.mee.2004.02.051

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Different techniques are available to describe line edge roughness (LER). Besides the standard deviation (a), the spatial frequency components can be resolved using the power spectral, density. Experiments show that LER can be described using a two-parameter model based on a first-order autoregressive process. In the model a correlation length and a are determined to explain LER effects in the range up to several mum. Experiments are presented in which the model is verified and a physical background for the two constraints is given. A chemical model of the formation of the LER is presented. The impact of this model on the LER and critical dimension variation description as defined by the ITRS roadmap is determined. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：265 / 270

页数：6

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