Application of field-induced source/drain Schottky metal-oxide-semiconductor to fin-like body field-effect transistor

被引：11

作者：

Lin, HC

Wang, MF

Hou, FJ

Liu, JT

Huang, TY

Sze, SM

机构：

[1] Natl Nano Device Labs, Hsinchu, Taiwan

[2] Natl Chiao Tung Univ, Inst Elect, Hsinchu, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2002年 / 41卷 / 6A期

关键词：

Schottky barrier; ambipolar; silicon-on-insulator (SOI); silicide; electrical junction;

D O I：

10.1143/JJAP.41.L626

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel Schottky barrier silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistor (MOSFET) device was proposed and demonstrated, The new device features a silicide source/drain and field-induced source/drain (S/D) extensions. Excellent ambipolar performance with a near-ideal sub-threshold slope (similar to 60 mV/decade) and high on-/off-state current ratio (comparable to or higher than 10(9)) is realized, for the first time, on a single device. These encouraging results suggest that the new device may be suitable for some niche applications requiring simple and low-temperature processing of complementary metal-oxide-semiconductor(CMOS)-like devices.

引用

页码：L626 / L628

页数：3

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