III-N light emitting diodes fabricated using RF nitrogen gas source MBE

Homo- acid heterojunction III-N light emitting diodes using RF atomic nitrogen plasma molecular beam epitaxy have been grown. GaN films deposited on sapphire using this growth technique exhibited an extremely sharp X-ray diffraction with a full width half maximum of 112 are sec. p-type doping of the nitride films was done with elemental Mg and resulted in as-grown p-type material with resistivities as low as 2 Omega . cm. Both homo- and heterojunction LEDs showed clear rectification. Emission from the GaN homojunction deposited on n-type SIC was peaked at 410 nm while the AIGaN-GaN(Zn)-AlGaN double heterojunction LEDs emission was centered about 520 nm.