Nanosecond time-resolved emission spectroscopy from silicon implanted and annealed SiO2 layers

被引:48
作者
Pifferi, A
Taroni, P
Torricelli, A
Valentini, G
Mutti, P
Ghislotti, G
Zanghieri, L
机构
[1] POLITECN MILAN,DIPARTIMENTO FIS,I-20133 MILAN,ITALY
[2] POLITECN MILAN,DIPARTIMENTO INGN NUCL,I-20133 MILAN,ITALY
关键词
D O I
10.1063/1.118410
中图分类号
O59 [应用物理学];
学科分类号
摘要
Photoluminescence decay curves and nanosecond time-gated spectra were measured from silicon implanted SiO2 layers after thermal annealing. Different ion fluences and annealing times were tested. Three components emitting blue-green light with lifetimes of about 0.4, 2, and 10 ns were detected. The peak position of all components moves to longer wavelengths upon increasing the ion fluence. This short-wavelength emission seems to be related to the presence of extended defects acting as precursors of nanocrystals. A slower (microsecond) component, centered in the near infrared and attributed to nanocrystals, was also identified in the highest fluence implant considered (3 x 10(17) cm(-2)). (C) 1997 American Institute of Physics.
引用
收藏
页码:348 / 350
页数:3
相关论文
共 18 条
  • [1] VISIBLE-LIGHT EMISSION FROM THIN-FILMS CONTAINING SI, O, N, AND H
    AUGUSTINE, BH
    IRENE, EA
    HE, YJ
    PRICE, KJ
    MCNEIL, LE
    CHRISTENSEN, KN
    MAHER, DM
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 78 (06) : 4020 - 4030
  • [2] OPTICAL-PROPERTIES OF POROUS SILICON - A 1ST-PRINCIPLES STUDY
    BUDA, F
    KOHANOFF, J
    PARRINELLO, M
    [J]. PHYSICAL REVIEW LETTERS, 1992, 69 (08) : 1272 - 1275
  • [3] SILICON QUANTUM WIRE ARRAY FABRICATION BY ELECTROCHEMICAL AND CHEMICAL DISSOLUTION OF WAFERS
    CANHAM, LT
    [J]. APPLIED PHYSICS LETTERS, 1990, 57 (10) : 1046 - 1048
  • [4] A SYSTEM FOR TIME-RESOLVED LASER FLUORESCENCE SPECTROSCOPY WITH MULTIPLE PICOSECOND GATING
    CUBEDDU, R
    DOCCHIO, F
    LIU, WQ
    RAMPONI, R
    TARONI, P
    [J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1988, 59 (10) : 2254 - 2259
  • [5] QUANTUM CONFINEMENT IN SI NANOCRYSTALS
    DELLEY, B
    STEIGMEIER, EF
    [J]. PHYSICAL REVIEW B, 1993, 47 (03): : 1397 - 1400
  • [6] IYER SS, 1992, MATER RES SOC S P, V256
  • [7] VISIBLE PHOTOLUMINESCENCE FROM SILICON-BACKBONE POLYMERS
    KANEMITSU, Y
    SUZUKI, K
    [J]. PHYSICAL REVIEW B, 1995, 51 (19): : 13103 - 13110
  • [8] VISIBLE PHOTOLUMINESCENCE AT ROOM-TEMPERATURE FROM MICROCRYSTALLINE SILICON PRECIPITATES IN SIO2 FORMED BY ION-IMPLANTATION
    KOMODA, T
    KELLY, J
    CRISTIANO, F
    NEJIM, A
    HEMMENT, PLF
    HOMEWOOD, KP
    GWILLIAM, R
    MYNARD, JE
    SEALY, BJ
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) : 387 - 391
  • [9] Stable electroluminescence from reverse biased n-type porous silicon-aluminum Schottky junction device
    Lazarouk, S
    Jaguiro, P
    Katsouba, S
    Masini, G
    LaMonica, S
    Maiello, G
    Ferrari, A
    [J]. APPLIED PHYSICS LETTERS, 1996, 68 (15) : 2108 - 2110
  • [10] Visible electroluminescence from Si+-implanted SiO2 films thermally grown on crystalline Si
    Liao, LS
    Bao, XM
    Li, NS
    Zheng, XQ
    Min, NB
    [J]. SOLID STATE COMMUNICATIONS, 1996, 97 (12) : 1039 - 1042