Defect structure of Ge-doped CdTe

被引：48

作者：

Fiederle, M

Babentsov, V

Franc, J

Fauler, A

Benz, KW

James, RB

Cross, E

机构：

[1] Univ Freiburg, Inst Kristallog, Freiburger Mat Forschungszentrum, D-79104 Freiburg, Germany

[2] Brookhaven Natl Lab, Upton, NY 11973 USA

[3] Sandia Natl Labs, Livermore, CA USA

[4] Inst Semicond Phys, UA-252028 Kiev, Ukraine

[5] Charles Univ Prague, Inst Phys, CZ-12116 Prague 2, Czech Republic

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 243卷 / 01期

关键词：

Bridgman technique; cadmium compounds; semiconducting II-VI materials;

D O I：

10.1016/S0022-0248(02)01479-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

A complex investigation of defect structure of high-resistivity Ge-doped CdTe by a number of optical, photoelectrical and electrical methods was performed. It was found that material properties are strongly influenced by the presence of centers of strong recombination (S-centers) and photosensitivity (R-centers). A model of energy levels dominating the recombination processes in the material was elaborated, where the role of Ge, Fe and Cu related as well as native defects (Cd vacancy) is discussed. (C) 2002 Elsevier Science B.V. All rights reserved.

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页码：77 / 86

页数：10

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