Epitaxial stabilization of oxides in thin films

被引:166
作者
Gorbenko, OY [1 ]
Samoilenkov, SV [1 ]
Graboy, IE [1 ]
Kaul, AR [1 ]
机构
[1] Moscow MV Lomonosov State Univ, Dept Chem, Moscow 119899, Russia
关键词
D O I
10.1021/cm021111v
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A survey of recent experimental results is given, presenting the growth of oxide epitaxial thin films in P-T-x conditions, which are far from those necessary for the existence of corresponding phases in a bulk state. The unstable in bulk BaCU3O4, NdMn7O12, RNiO3, and unusual polymorphous forms of BaRuO3, RMno(3), TiO2, and Mn3O4 are some examples. The stabilizing effect is observed only if epitaxial growth is induced. A rich variety of the effect observations are demonstrated to be of a thermodynamic origin, rather than of a kinetic one. Epitaxial stabilization is shown to be the result of the low energy of coherent interfaces formed due to epitaxy.
引用
收藏
页码:4026 / 4043
页数:18
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