Vacancy structures on the GaN(0001) surface

被引：14

作者：

Packard, WE

Dow, JD

Doverspike, K

Kaplan, R

Nicolaides, R

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] INST POSTDOCTORAL STUDIES,ST JOHN,VI 00830

来源：

JOURNAL OF MATERIALS RESEARCH | 1997年 / 12卷 / 03期

关键词：

D O I：

10.1557/JMR.1997.0098

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Scanning tunneling microscopy images are reported for the wurtzite GaN(0001) surface. Terraces are observed, with three kinds of defect structures that are assigned to ordered N-vacancies: (i) striations perpendicular to the step edges, (ii) row defects spaced about 16 Angstrom that intersect the steps at an angle of 30 degrees, and (iii) ''oval'' defects that result from intersections of lines of vacancies (oriented at 60 degrees with respect to step edges) with the row defects.

引用

页码：646 / 650

页数：5

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