Improvement of the quality factor of RF integrated inductors by layout optimization

被引:171
作者
López-Villegas, JM [1 ]
Samitier, J
Cané, C
Losantos, P
Bausells, J
机构
[1] Univ Barcelona, Dept Elect, E-08028 Barcelona, Spain
[2] Natl Microelect Ctr, E-08193 Barcelona, Spain
关键词
inductor layout optimization; integrated RF inductor; silicon micromachining for RF applications; silicon RFIC's;
D O I
10.1109/22.817474
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A systematic method to improve the quality (Q) factor of RF integrated inductors is presented in this paper. The proposed method is based on the layout optimization to minimize the series resistance of the inductor coil, taking into account both ohmic losses, due to conduction currents, and magnetically induced losses, due to Eddy currents. The technique is particularly useful when applied to inductors in which the fabrication process includes integration substrate removal. However, it is also applicable to inductors on low-loss substrates, The method optimizes the width of the metal strip for each turn of the inductor coil, leading to a variable strip-width layout. The optimization procedure has been successfully applied to the design of square spiral inductors in a silicon-based multichip-module technology, complemented with silicon micromachining postprocessing. The obtained experimental results corroborate the validity of the proposed method. A Q factor of about 17 have been obtained for a 35-nH inductor at 1.5 GHz, with Q values higher than 40 predicted for a 20-nH inductor working at 3.5 GHz, The latter is up to a 60% better than the best results for a single strip-width inductor working at the same frequency.
引用
收藏
页码:76 / 83
页数:8
相关论文
共 10 条
[1]   LARGE SUSPENDED INDUCTORS ON SILICON AND THEIR USE IN A 2-MU-M CMOS RF AMPLIFIER [J].
CHANG, JYC ;
ABIDI, AA ;
GAITAN, M .
IEEE ELECTRON DEVICE LETTERS, 1993, 14 (05) :246-248
[2]   PLANAR MICROWAVE AND MILLIMETER-WAVE LUMPED ELEMENTS AND COUPLED-LINE FILTERS USING MICROMACHINING TECHNIQUES [J].
CHI, CY ;
REBEIZ, GM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (04) :730-738
[3]   A 1.8-GHz low-phase-noise CMOS VCO using optimized hollow spiral inductors [J].
Craninckx, J ;
Steyaert, MSJ .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1997, 32 (05) :736-744
[4]   DEVELOPMENT OF SELF-PACKAGED HIGH-FREQUENCY CIRCUITS USING MICROMACHINING TECHNIQUES [J].
DRAYTON, RF ;
KATEHI, LPB .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (09) :2073-2080
[5]   Study of integrated RF passive components performed using CMOS and Si micromachining technologies [J].
LopezVillegas, JM ;
Samitier, J ;
Bausells, J ;
Merlos, A ;
Cane, C ;
Knochel, R .
JOURNAL OF MICROMECHANICS AND MICROENGINEERING, 1997, 7 (03) :162-164
[6]  
LOPEZVILLEGAS JM, 1995, J MICROMECH MICROENG, V43, P534
[7]   SI IC-COMPATIBLE INDUCTORS AND LC PASSIVE FILTERS [J].
NGUYEN, NM ;
MEYER, RG .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1990, 25 (04) :1028-1031
[8]   A 1 GHz CMOS RF front-end IC for a direct-conversion wireless receiver [J].
Rofougaran, A ;
Chang, JYC ;
Rofougaran, M ;
Abidi, AA .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1996, 31 (07) :880-889
[9]  
WARNER RM, 1965, INTEGRATED CIRCUITS, P267
[10]   HIGH-PERFORMANCE MICROSHIELD LINE COMPONENTS [J].
WELLER, TM ;
KATEHI, LPB ;
REBEIZ, GM .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1995, 43 (03) :534-543