Remote Plasma ALD of Platinum and Platinum Oxide Films

被引：112

作者：

Knoops, H. C. M. ^{[1
,2
]}

Mackus, A. J. M. ^{[2
]}

Donders, M. E. ^{[1
,2
]}

van de Sanden, M. C. M. ^{[2
]}

Notten, P. H. L. ^{[2
,3
]}

Kessels, W. M. M. ^{[2
]}

机构：

[1] Mat Innovat Inst M2i, NL-2600 GA Delft, Netherlands

[2] Eindhoven Univ Technol, NL-5600 MB Eindhoven, Netherlands

[3] Philips Res, NL-5656 AE Eindhoven, Netherlands

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 07期

关键词：

atomic layer deposition; electrical resistivity; metallic thin films; plasma materials processing; platinum; platinum compounds; semiconductor growth; semiconductor thin films; ATOMIC LAYER DEPOSITION; THIN-FILMS; BATTERIES; RUTHENIUM; OXYGEN;

D O I：

10.1149/1.3125876

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Platinum and platinum oxide films were deposited by remote plasma atomic layer deposition (ALD) from the combination of (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe(3)) precursor and O(2) plasma. A short O(2) plasma exposure (0.5 s) resulted in low resistivity (15 mu Omega cm), high density (21 g/cm(3)), cubic Pt films, whereas a longer O(2) plasma exposure (5 s) resulted in semiconductive PtO(2) films. In situ spectroscopic ellipsometry studies revealed no significant nucleation delay, different from the thermal ALD process with O(2) gas which was used as a benchmark. A broad temperature window (100-300 degrees C) for remote plasma ALD of Pt and PtO(2) was demonstrated.

引用

页码：G34 / G36

页数：3

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