Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

被引：39

作者：

Park, MC

Huh, KS

Myoung, JM

Lee, JM

Chang, JY

Lee, KI

Han, SH

Lee, WY

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Informat & Elect Mat Res Lab, Seoul 120749, South Korea

[2] Korea Inst Sci & Technol, Nano Device Res Ctr, Seoul 130650, South Korea

来源：

SOLID STATE COMMUNICATIONS | 2002年 / 124卷 / 1-2期

关键词：

(Ga; Mn)N; diluted magnetic semiconductor; wide bandgap ferromagnetic semiconductor; plasma-enhanced molecular beam epitaxy;

D O I：

10.1016/S0038-1098(02)00471-4

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

页码：11 / 14

页数：4

共 18 条

[1] Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb [J].