Study on fence-free platinum etching using chlorine-based gases in inductively coupled plasma

被引：18

作者：

Chung, CW

Song, HG

机构：

[1] Samsung Adv. Institute of Technology, Electronic Materials Laboratory, Materials Sector

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 11期

关键词：

D O I：

10.1149/1.1838073

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Platinum thin films have been successfully etched without redeposition of etch products using chlorine-based gases in an inductively coupled plasma. The redeposited materials formed on the pattern sidewall by using Cl-2/Ar gas combination were analyzed by x-ray photoelectron spectroscopy and secondary ion mass spectrometry. We found that the redeposited material was mainly PtCl2 compound. Based on this result, SiCl4/Cl-2/Ar gas chemistry has been proposed as a new etching gas and demonstrated good etching profile of Pt films without unwanted redeposition.

引用

页码：L294 / L296

页数：3

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