Variation of structural, electrical, and optical properties of Zn1-xMgxO thin films

被引：54

作者：

Kim, Jae Won

Kang, Hong Seong

Kim, Jong Hoon

Lee, Sang Yeol

Lee, Jung-Kun

Nastasi, Michael

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seodaemoon Ku, Seoul 120749, South Korea

[2] Los Alamos Natl Lab, Mat Sci & Technol Div, Los Alamos, NM 87545 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2006年 / 100卷 / 03期

关键词：

D O I：

10.1063/1.2219153

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn1-xMgxO thin films on (001) sapphire substrates were deposited using pulsed laser deposition. As the substrate temperature increased, the Mg content in the Zn1-xMgxO thin films increased and the photoluminescence (PL) peak position of the Zn1-xMgxO thin films shifted from 370 to 356 nm, indicating a band gap expansion. Variations of the structural, electrical, and optical properties of Zn1-xMgO thin films have been observed and analyzed by x-ray diffraction, Hall measurements, and PL measurements. (c) 2006 American Institute of Physics.

引用

页数：5

共 19 条

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