Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer

被引:9
作者
Chen, H [1 ]
Cai, LC [1 ]
Bao, CL [1 ]
Li, JH [1 ]
Huang, Q [1 ]
Zhou, JM [1 ]
机构
[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China
关键词
molecular beam epitaxy; InAs; GaAs;
D O I
10.1016/S0022-0248(99)00433-9
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The strain relaxed InAs grown on GaAs(0 0 1) under In-rich condition is investigated by X-ray double-crystal diffraction. It is found that the strain is fully relaxed within 10 nm thick InAs layer grown under this condition, which is much faster than the growth of a similar layer of InAs under As-condition. A new growth method to obtain a high-quality InAs layer is suggested. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:795 / 798
页数:4
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