Two-step method to grow InAs epilayer on GaAs substrate using a new prelayer

被引：9

作者：

Chen, H ^{[1
]}

Cai, LC ^{[1
]}

Bao, CL ^{[1
]}

Li, JH ^{[1
]}

Huang, Q ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 208卷 / 1-4期

关键词：

molecular beam epitaxy; InAs; GaAs;

D O I：

10.1016/S0022-0248(99)00433-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The strain relaxed InAs grown on GaAs(0 0 1) under In-rich condition is investigated by X-ray double-crystal diffraction. It is found that the strain is fully relaxed within 10 nm thick InAs layer grown under this condition, which is much faster than the growth of a similar layer of InAs under As-condition. A new growth method to obtain a high-quality InAs layer is suggested. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：795 / 798

页数：4

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