Self-assembled InAs quantum dots on InP(001) for long-wavelength laser applications

被引：12

作者：

Kim, JS ^{[1
]}

Lee, JH ^{[1
]}

Hong, SU ^{[1
]}

Kwack, HS ^{[1
]}

Lee, CW ^{[1
]}

Oh, DK ^{[1
]}

机构：

[1] ETRI, Basic Res Lab, Taejon, South Korea

来源：

ETRI JOURNAL | 2004年 / 26卷 / 05期

关键词：

InAs quantum dots; growth behavior; InP (001); laser;

D O I：

10.4218/etrij.04.0104.0028

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled InAs quantum dots (QDs) embedded in an InAlGaAs matrix were grown on an InP (001) using a solid-source molecular beam epitaxy and investigated using transmission electron microscopy (TENI) and photoluminescence (PL) spectroscopy. TEM images indicated that the QD formation was strongly dependent on the growth behaviors of group III elements during the deposition of InAlGaAs barriers. We achieved a lasing operation of around 1.5 mum at room temperature from uncoated QD lasers based on the InAlGaAs-InAlAs material system on the InP (001). The lasing wavelengths of the ridge-waveguide QD lasers were also dependent upon the cavity lengths due mainly to the gain required for the lasing operation.

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收藏

页码：475 / 480

页数：6

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