In-line channel power monitor based on helium ion implantation in silicon-on-insulator waveguides

被引：52

作者：

Liu, Y. ^{[1
]}

Chow, C. W.

Cheung, W. Y.

Tsang, H. K.

机构：

[1] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

[2] Chinese Univ Hong Kong, Dept Elect Engn, Shatin, Hong Kong, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2006年 / 18卷 / 17-20期

关键词：

helium ion implantation; in-line power monitor; silicon waveguide;

D O I：

10.1109/LPT.2006.881246

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose and demonstrate an in-line channel power monitor (ICPM) based on helium ion implanted silicon waveguides. The implanted waveguide can detect light at below-bandgap wavelengths (1440-1590 nm) which are normally not detectable by silicon. We study the enhanced photoresponse of helium ion implanted samples which were annealed at 200 degrees C, 300 degrees C, or 350 degrees C for different durations. Optical absorption and photodetector current measurements were performed for each sample. The ICPM can provide the same function as a waveguide tap coupler and a hybrid-integrated conventional photodiode.

引用

页码：1882 / 1884

页数：3

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