Flexible Low-Voltage Organic Transistors with High Thermal Stability at 250 °C

被引：99

作者：

Yokota, Tomoyuki ^{[1
]}

Kuribara, Kazunori ^{[1
]}

Tokuhara, Takeyoshi ^{[2
]}

Zschieschang, Ute ^{[3
]}

Klauk, Hagen ^{[3
]}

Takimiya, Kazuo ^{[4
]}

Sadamitsu, Yuji ^{[5
]}

Hamada, Masahiro ^{[5
]}

Sekitani, Tsuyoshi ^{[2
]}

Someya, Takao ^{[1
,2
]}

机构：

[1] Univ Tokyo, Dept Appl Phys, Bunkyo Ku, Tokyo 1138656, Japan

[2] Univ Tokyo, Dept Elect Engn, Tokyo 1138656, Japan

[3] Max Planck Inst Solid State Res, Stuttgart, Germany

[4] Hiroshima Univ, Inst Adv Mat Res, Grad Sch Engn, Dept Appl Chem, Higashihiroshima 724, Japan

[5] Nippon Kayaku Co Ltd, R&D Planning Div, Res & Developmant Grp, Kita Ku, Tokyo 115, Japan

来源：

ADVANCED MATERIALS | 2013年 / 25卷 / 27期

基金：

日本学术振兴会;

关键词：

thermal stability; organic field-effect transistors; organic electronics; self-assembled monolayer; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; LARGE-AREA; COMPLEMENTARY CIRCUITS; PENTACENE; MOBILITY; TECHNOLOGY; PRESSURE; POLYMER;

D O I：

10.1002/adma.201300941

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Low-operating-voltage flexible organic thin-film transistors with high thermal stability using DPh-DNTT and SAM gate dielectrics are reported. The mobility of the transistors are decreased by 23% after heating to 250°C for 30 min. Furthermore, flexible organic pseudo-CMOS inverter circuits, which are functional after heating to 200°C, are demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：3639 / 3644

页数：6

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