Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

被引：649

作者：

Hoex, B. ^{[1
]}

Heil, S. B. S. ^{[1
]}

Langereis, E. ^{[1
]}

van de Sanden, M. C. M. ^{[1
]}

Kessels, W. M. M. ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 04期

关键词：

D O I：

10.1063/1.2240736

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Excellent surface passivation of c-Si has been achieved by Al2O3 films prepared by plasma-assisted atomic layer deposition, yielding effective surface recombination velocities of 2 and 13 cm/s on low resistivity n- and p-type c-Si, respectively. These results obtained for similar to 30 nm thick Al2O3 films are comparable to state-of-the-art results when employing thermal oxide as used in record-efficiency c-Si solar cells. A 7 nm thin Al2O3 film still yields an effective surface recombination velocity of 5 cm/s on n-type silicon.

引用

页数：3

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