Surface modification of Si-containing polymers during etching for bilayer lithography

被引：27

作者：

Eon, D

de Poucques, L

Peignon, MC

Cardinaud, C

Turban, G

Tserepi, A

Cordoyiannis, G

Valamontes, ES

Raptis, I

Gogolides, E

机构：

[1] Inst Mat Jean Rouxel, Lab Plasmas & Couches Minces, F-44322 Nantes, France

[2] UHP NANCY 1, Phys Milieux Ionises & Applicat Lab, F-54506 Vandoeuvre Les Nancy, France

[3] NCRS Demokritos, Inst Microelect, Aghia Paraskevi 15310, Greece

[4] Technol Educ Inst Athens, Aegaleo 12210, Greece

来源：

MICROELECTRONIC ENGINEERING | 2002年 / 61-2卷

关键词：

PDMS; XPS; pattern roughness; bilayer lithography;

D O I：

10.1016/S0167-9317(02)00482-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Surface modification of polydimethylsiloxane (PDMS) under O-2 plasma exposure is studied by XPS and real time ellipsometry. Results show the conversion of the PDMS surface into a SiOx-like material. Total layer thickness and extension of the SiOx layer are controlled by the sample bias. We suggest that surface and line edge roughness defects occurring when using PDMS as top layer in bilayer lithography are intimately related to the rapid kinetics of conversion and to the formation of SiOx hard micromasks on the surface. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：901 / 906

页数：6

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