Absorbance and outgasing of photoresist polymeric materials for UV lithography below 193 nm including 157 nm lithography

The absorption spectra in the vacuum ultraviolet region of the spectrum from 140 to 200 nm, of various Si-based polymers and polymeric materials with aliphatic and aromatic structure for 157nm lithographic applications are discussed in this paper. Si- based polymers seem to have the right value of absorbance at 157nm. Therefore they can be imaged at the usual bilayer thickness of 0.1 mu m. Mass spectroscopic and outgasing studies at 157nm suggest that a complete bond breaking of the aromatic and linear carbon chains is taking place even at low values of the laser energy.