Electrical characterization of nanocontacts fabricated by nanoindentation and electrodeposition

被引：14

作者：

Carrey, J

Bouzehouane, K

George, JM

Ceneray, C

Blon, T

Bibes, M

Vaurès, A

Fusil, S

Kenane, S

Vila, L

Piraux, L

机构：

[1] THALES, CNRS, Unite Mixte Phys, F-91405 Orsay, France

[2] Univ Evry, Lab Multicouches Nanometr, F-91025 Evry, France

[3] Univ Louvain La Neuve, Lab PCPM, B-1348 Louvain, Belgium

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 04期

关键词：

D O I：

10.1063/1.1495524

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the electrical characterization of various types of nanocontacts fabricated by nanoindentation and electrodeposition. Arrays of holes with depths ranging from 0 to 20 nm were produced by nanoindenting at different strengths an Al2O3-50 Angstrom/NiFe-150 Angstrom//Si bilayer. NiFe was then electrodeposited, which led to the growth of particles in the holes. The resistance of the particles was measured with a conducting tip atomic force microscope. Depending on the strength used during the nanoindentation, the resistance ranges from less than 5x10(3) Omega to more than 10(12) Omega. The low-resistance constrictions can be used to study ballistic transport in materials. High-resistance contacts presumably correspond to tunnel nanojunctions. (C) 2002 American Institute of Physics.

引用

页码：760 / 762

页数：3

共 14 条

[1] Conducting tip atomic force microscopy analysis of aluminum oxide barrier defects decorated by electrodeposition
Carrey, J
Bouzehouane, K
George, JM
Ceneray, C
Fert, A
Vaurès, A
Kenane, S
Piraux, L
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (19) : 3158 - 3160
[2] DESCHMIDT R, 1998, APPL PHYS LETT, V72, P386
[3] Negative and positive magnetoresistance manipulation in an electrodeposited nanometer Ni contact
García, N
Rohrer, H
Saveliev, IG
Zhao, YW
[J]. PHYSICAL REVIEW LETTERS, 2000, 85 (14) : 3053 - 3056
[4] Magnetoresistance in excess of 200% in ballistic Ni nanocontacts at room temperature and 100 Oe
García, N
Muñoz, M
Zhao, YW
[J]. PHYSICAL REVIEW LETTERS, 1999, 82 (14) : 2923 - 2926
[5] Tunneling via individual electronic states in ferromagnetic nanoparticles
Guéron, S
Deshmukh, MM
Myers, EB
Ralph, DC
[J]. PHYSICAL REVIEW LETTERS, 1999, 83 (20) : 4148 - 4151
[6] Imaging the local electrical properties of metal surfaces by atomic force microscopy with conducting probes
Houze, F
Meyer, R
Schneegans, O
Boyer, L
[J]. APPLIED PHYSICS LETTERS, 1996, 69 (13) : 1975 - 1977
[7] Conductance quantization and magnetoresistance in magnetic point contacts
Imamura, H
Kobayashi, N
Takahashi, S
Maekawa, S
[J]. PHYSICAL REVIEW LETTERS, 2000, 84 (05) : 1003 - 1006
[8] POINT-CONTACT SPECTROSCOPY IN METALS
JANSEN, AGM
VANGELDER, AP
WYDER, P
[J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1980, 13 (33): : 6073 - 6118
[9] Magnetoresistance of ferromagnetic tunnel junctions with Al2O3 barriers formed by rf sputter etching in Ar/O2 plasma
Nassar, J
Hehn, M
Vaures, A
Petroff, F
Fert, A
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (05) : 698 - 700
[10] Magnon excitation by spin injection in thin Fe/Cr/Fe films
Rezende, SM
de Aguiar, FM
Lucena, MA
Azevedo, A
[J]. PHYSICAL REVIEW LETTERS, 2000, 84 (18) : 4212 - 4215

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