Conducting tip atomic force microscopy analysis of aluminum oxide barrier defects decorated by electrodeposition

被引:3
作者
Carrey, J
Bouzehouane, K
George, JM
Ceneray, C
Fert, A
Vaurès, A
Kenane, S
Piraux, L
机构
[1] THALES, CNRS, Unite Mixte Phys, F-91404 Orsay, France
[2] Univ Paris 11, F-91405 Orsay, France
[3] Univ Louvain La Neuve, Unite Physicochim & Phys Mat, B-1348 Louvain, Belgium
关键词
D O I
10.1063/1.1415775
中图分类号
O59 [应用物理学];
学科分类号
摘要
We show that the electrodeposition of Ni80Fe20 on top of a thin aluminum oxide barrier leads to particle growth occurring on preferential nucleation centers. The particle sites are attributed to local defects in the aluminum oxide barrier. As a function of the thickness of the barrier, different growth modes can occur. For thinner barriers, new nucleation centers are created during electrodeposition. The resistance of the defects, characterized by conducting atomic force microscopy, ranges from less than 10(4) to greater than 10(12) Omega. Various I(V) characteristics were also obtained, depending on the resistance of the defect. These results suggest that this experimental technique could be a very interesting one with which to fabricate nanoconstrictions dedicated to ballistic magnetoresistance studies. (C) 2001 American Institute of Physics.
引用
收藏
页码:3158 / 3160
页数:3
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