MBE growth of Si-doped InAlAsSb layers lattice-matched with InAs

被引：18

作者：

Kudo, M

Mishima, T

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji-shi, Tokyo 185, 1-280, Higashi-Koigakubo

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 175卷

关键词：

two-dimensional electron gas; modulation-doped heterostructures; InAs channel; electron-supplying layer;

D O I：

10.1016/S0022-0248(96)00935-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The two-dimensional electron gas concentration in InAs channel modulation-doped heterostructures can be controlled by using an In0.5Al0.5As0.56Sb0.44 quaternary alloy - doped with Si as a donor - as an electron-supplying layer. When lattice-matched with InAs, an electron concentration of more than 4 x 10(18) cm(-3) was obtained in the quaternary layer. The two-dimensional electron gas concentration of an undoped-In0.5Al0.5As0.56Sb0.44/undoped-heterostructure was 7 x 10(11)cm(-2) and that of a. Si-doped In0.5Al0.5As0.56Sb0.44/undoped-InAs heterostructure was 1.24 x 10(12) cm(-2). The electron mobility was Iom, though, due to the roughness of the heterointerface. If the interface can be made smooth: however, In0.5Al0.5As0.56Sb0.44 will be a useful material for forming the electron-supplying layer of InAs channel modulation-doped heterostructures.

引用

页码：844 / 848

页数：5

共 14 条

[11] EFFECTS OF INTERFACE LAYER SEQUENCING ON THE TRANSPORT-PROPERTIES OF INAS/ALSB QUANTUM-WELLS - EVIDENCE FOR ANTISITE DONORS AT THE INAS/ALSB INTERFACE [J].