STUDY OF MOLECULAR-BEAM EPITAXY GAAS1-XSBX(XLESS-THAN0.76) GROWN ON GAAS(100)

被引：16

作者：

ZHAO, JH

LI, AZ

JEONG, J

WONG, D

LEE, JC

MILLIMAN, ML

SCHLESINGER, TE

MILNES, AG

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1988年 / 6卷 / 02期

关键词：

D O I：

10.1116/1.584417

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：627 / 630

页数：4

共 20 条

[1]

BEDAIR SM, 1980, I PHYS C SER, V56, P403

[2] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY [J].

CHANG, CA ;

LUDEKE, R ;

CHANG, LL ;

ESAKI, L .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :759-761

[3] LATTICE-MISMATCHED HETEROEPITAXIAL INTERFACE OF GAASYSB1-Y ON GAAS SUBSTRATES [J].

CHENG, H ;

KOYANAGI, T ;

MILNES, AG .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1986, 4 (02) :528-531

[4] MOLECULAR-BEAM EPITAXY OF GASB0.5AS0.5 AND ALXGA1-XSBYAS1-Y LATTICE MATCHED TO INP [J].

CHIU, TH ;

TSANG, WT ;

CHU, SNG ;

SHAH, J ;

DITZENBERGER, JA .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :408-410

[5] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY [J].

CHO, AY ;

CASEY, HC ;

FOY, PW .

APPLIED PHYSICS LETTERS, 1977, 30 (08) :397-399

[6] RAMAN AND PHOTOLUMINESCENCE SPECTRA OF GAAS1-XSBX [J].

COHEN, RM ;

CHERNG, MJ ;

BENNER, RE ;

STRINGFELLOW, GB .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (10) :4817-4819

[7]

HENRY PS, 1985, IEEE COMMUN MAG, V23, P13

[8]

KERR TM, 1984, J VAC SCI TECHNOL B, V3, P535

[9] GAAS/GAAS1-YSBY SUPERLATTICE LIGHT-EMITTING-DIODES [J].

KLEM, J ;

FISCHER, R ;

MASSELINK, WT ;

KOPP, W ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (10) :3843-3845

[10] INCORPORATION OF SB IN GAAS1-XSBX (X-LESS-THAN-0.15) BY MOLECULAR-BEAM EPITAXY [J].

KLEM, J ;

FISCHER, R ;

DRUMMOND, TJ ;

MORKOC, H ;

CHO, AY .

ELECTRONICS LETTERS, 1983, 19 (12) :453-455

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