LATTICE-MISMATCHED HETEROEPITAXIAL INTERFACE OF GAASYSB1-Y ON GAAS SUBSTRATES

被引：4

作者：

CHENG, H ^{[1
]}

KOYANAGI, T ^{[1
]}

MILNES, AG ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,PITTSBURGH,PA 15213

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1986年 / 4卷 / 02期

关键词：

D O I：

10.1116/1.583418

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：528 / 531

页数：4

共 27 条

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES
ASPNES, DE
[J]. SURFACE SCIENCE, 1983, 132 (1-3) : 406 - 421
[2] MOLECULAR-BEAM EPITAXY (MBE) OF IN1-XGAXAS AND GASB1-YASY
CHANG, CA
LUDEKE, R
CHANG, LL
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 759 - 761
[3] GAAS EPITAXY BY A MOLECULAR BEAM METHOD - OBSERVATIONS OF SURFACE STRUCTURE ON (001) FACE
CHO, AY
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (05) : 2074 - &
[4] BACK-SURFACE EMITTING GAASXSB1-XLEDS(LAMBDA=1.0MUM) PREPARED BY MOLECULAR-BEAM EPITAXY
CHO, AY
CASEY, HC
FOY, PW
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (08) : 397 - 399
[5] ETTENBERG M, 1977, J APPL PHYS, V48, P4277
[6] RELATIONSHIP BETWEEN THE CONDUCTION-BAND DISCONTINUITIES AND BAND-GAP DIFFERENCES OF INGAASP/INP HETEROJUNCTIONS
FORREST, SR
SCHMIDT, PH
WILSON, RB
KAPLAN, ML
[J]. APPLIED PHYSICS LETTERS, 1984, 45 (11) : 1199 - 1201
[7] DEEP LEVELS IN IN0.53GA0.47AS/INP HETEROSTRUCTURES
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) : 5738 - 5745
[8] COMPOSITION EFFECTS IN THE GROWTH OF GA(IN)ASYP1-Y ALLOYS BY MBE
FOXON, CT
JOYCE, BA
NORRIS, MT
[J]. JOURNAL OF CRYSTAL GROWTH, 1980, 49 (01) : 132 - 140
[9] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225
[10] THE GROWTH AND DOPING OF GAASYSB1-Y BY MOLECULAR-BEAM EPITAXY
KERR, TM
MCLEAN, TD
WESTWOOD, DI
GRANGE, JD
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02): : 535 - 535

← 1 2 3 →