Property of hexafluoroacetylacetonateCu(I) (3,3-dimethyl-1-butene) as a liquid precursor for chemical vapor deposition of copper films

被引：30

作者：

Rhee, SW ^{[1
]}

Kang, SW

Han, SH

机构：

[1] Pohang Univ Sci & Technol, Dept Chem Engn, Lab Adv Mat Proc, Pohang 790784, South Korea

[2] Nano Tera Mat Inc, Pohang, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 03期

关键词：

Auger electron spectroscopy - Band structure - Chemical vapor deposition - Copper - Electric conductivity - Electronic density of states - Liquid metals - Pressure measurement - Thermal effects - Thermoanalysis - Thin films;

D O I：

10.1149/1.1390980

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

An organometallic precursor, hexafluoroacerylacetonate (hfac)Cu(I) (3,3-dimethyl-1-butene) (DMB) was studied for metallorganic chemical vapor deposition of copper thin films. It was found that at 40 degrees C, the vapor pressure was an order of magnitude higher (about 2 Torr) than (hfac)Cu vinyltrimethylsilane, and films could be deposited at the substrate temperature of 100-280 degrees C with a substantially higher deposition rate. The copper films contained no detectable impurities as measured by Auger electron spectroscopy and had a resistivity of about 2.0 mu Omega cm in the deposition temperature range of 150-250 degrees C. From the thermal analysis, (hfac)Cu(I) (DMB) is believed to be stable and no appreciable amount of precipitation was observed on holding the temperature at 65 degrees C for more than a month. (C) 2000 The Electrochemical Society. S1099-0062(99)08-070-2. All rights reserved.

引用

页码：135 / 137

页数：3

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