Ultrafast carrier dynamics and intervalley scattering in ZnSe

被引：14

作者：

Dougherty, DJ

Fleischer, SB

Warlick, EL

House, JL

Petrich, GS

Kolodziejski, LA

Ippen, EP

机构：

[1] Research Laboratory of Electronics, Massachussets Inst. of Technology, Cambridge

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 21期

关键词：

D O I：

10.1063/1.120271

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Intraband carrier dynamics were measured in ZnSe films by a two-wavelength pump probe technique with 180 fs resolution. A below-band pump pulse was used to heat carrier distributions in N-type samples by free carrier absorption. The electron cooling time constant was observed to be 500 fs. Intervalley scattering was seen to play a significant role in the electron dynamics and the scattering time from the L back to the Gamma valley was measured to be 1.8 ps. By examining the ratio of the intervalley component to the total response as a function of pump photon energy, the bottom of the L valley was determined to lie 1.30 eV above the Gamma-valley minimum. (C) 1997 American Institute of Physics.

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页码：3144 / 3146

页数：3

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