Multichannel carbon-nanotube FETs and complementary logic gates with nanowelded contacts

被引：39

作者：

Chen, Changxin ^{[1
]}

Xu, Dong ^{[1
]}

Kong, Eric Siu-Wai ^{[1
]}

Zhang, Yafei ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Natl Key Lab Nanomicro Fabricat Technol, Key Lab Thin Film & Microfabrat Minist Educ, Inst Micronano Sci & Technol, Shanghai 200030, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 10期

基金：

中国国家自然科学基金;

关键词：

complementary inverters; electric-field alignment; multichannel carbon-nanotube field-effect transistors (MC-CNTFEts); ultrasonic nanowelding;

D O I：

10.1109/LED.2006.882530

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance multichannel carbon-nanotube field-effect transistor (MC-CNTFET) has been built by applying an array of parallel nanowelded single-walled carbon nanotubes (SWCNTs) as the channels. The SWCNT channel array with good directional and spatial control was obtained by the ac electric-field alignment of SWCNTs on a specially designed electrode. An ultrasonic nanowelding technique was utilized to achieve the reliable and highly transparent contacts between SWCNT channels and electrodes. Both p- and n-MC-CNTFETs fabricated exhibit high performance. Key transistor performance parameters, transconductance and carrier mobility reach 50.2 mu S and 7160 cm(2) (.) V-1 . s(-1) for p-MC-CNTFETs, and 36.5 mu S and 5311 cm(2 .) V-1 (.) s(-1) for n-MC-CNTFETs, respectively. Using the authors' techniques, complementary inverters with a high gain of up to 31.2 have also been demonstrated.

引用

页码：852 / 855

页数：4

共 23 条

[21] High-mobility carbon-nanotube thin-film transistors on a polymeric substrate [J].