Sputtered TaX film properties for x-ray mask absorbers

被引：23

作者：

Yoshihara, T

Kotsuji, S

Suzuki, K

机构：

[1] Microlectron. Research Laboratories, NEC Corporation, Tsukuba, Ibaraki 305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 06期

关键词：

D O I：

10.1116/1.589054

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of several elements for binary tantalum alloys, such as crystal structure, x-ray absorption, and dry-etching properties were systematically investigated. As a result, TaGe, TaSi, TaRe, and TaTi were selected as potential candidates for x-ray mask absorbers. We deposited these Ta alloys using conventional magnetron sputtering. The stress in the TaX films was controlled more precisely than in Ta films. It was found that TaGe was one of the most suitable materials based on x-ray absorption, stress control, and fine pattern fabrication. (C) 1996 American Vacuum Society.

引用

页码：4363 / 4365

页数：3

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