Defects in semiconductors and their effects on devices

被引：83

作者：

Mahajan, S ^{[1
]}

机构：

[1] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

ACTA MATERIALIA | 2000年 / 48卷 / 01期

关键词：

semiconductors; defects; devices; electrical properties; dislocations;

D O I：

10.1016/S1359-6454(99)00292-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The classification of defects in semiconductors and their electronic properties are discussed. The sources of dislocations in bulk crystals and defects in epitaxial layers have been identified. Some of the approaches used to lower the density of dislocations in crystals and layers are presented. Effects of defects on devices are also considered. (C) 2000 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：137 / 149

页数：13

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