Defects in semiconductors and their effects on devices

被引：83

作者：

Mahajan, S ^{[1
]}

机构：

[1] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA

[2] Arizona State Univ, Ctr Solid State Elect Res, Tempe, AZ 85287 USA

来源：

ACTA MATERIALIA | 2000年 / 48卷 / 01期

关键词：

semiconductors; defects; devices; electrical properties; dislocations;

D O I：

10.1016/S1359-6454(99)00292-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The classification of defects in semiconductors and their electronic properties are discussed. The sources of dislocations in bulk crystals and defects in epitaxial layers have been identified. Some of the approaches used to lower the density of dislocations in crystals and layers are presented. Effects of defects on devices are also considered. (C) 2000 Acta Metallurgica Inc. Published by Elsevier Science Ltd. All rights reserved.

引用

页码：137 / 149

页数：13

共 61 条

[41] GROWTH-INDUCED AND PROCESSING INDUCED DEFECTS IN SEMICONDUCTORS
MAHAJAN, S
[J]. PROGRESS IN MATERIALS SCIENCE, 1989, 33 (01) : 1 - 84
[42] MECHANISM OF OPTICALLY INDUCED DEGRADATION IN INP-IN1-XGAXASYP1-Y HETEROSTRUCTURES
MAHAJAN, S
JOHNSTON, WD
POLLACK, MA
NAHORY, RE
[J]. APPLIED PHYSICS LETTERS, 1979, 34 (10) : 717 - 719
[43] Defects in epitaxial layers of compound semiconductors grown by OMVPE and MBE techniques
Mahajan, S
[J]. PROGRESS IN MATERIALS SCIENCE, 1997, 42 (1-4) : 341 - 355
[44] Mahajan S, 1996, MATER RES SOC SYMP P, V410, P3
[45] MAHAJAN S, 1999, PRINCIPLES GROWTH PR, P116
[46] ACCOMMODATION OF MISFIT ACROSS INTERFACE BETWEEN SINGLE-CRYSTAL FILMS OF VARIOUS FACE-CENTRED CUBIC METALS
MATTHEWS, JW
[J]. PHILOSOPHICAL MAGAZINE, 1966, 13 (126): : 1207 - &
[47] Origins of defects in self assembled GaP islands grown on Si(001) and Si(111)
Narayanan, V
Sukidi, N
Bachmann, KJ
Mahajan, S
[J]. THIN SOLID FILMS, 1999, 357 (01) : 53 - 56
[48] DEFECT STRUCTURE INTRODUCED DURING OPERATION OF HETEROJUNCTION GAAS LASERS
PETROFF, P
HARTMAN, RL
[J]. APPLIED PHYSICS LETTERS, 1973, 23 (08) : 469 - 471
[49] DEFORMATION-BEHAVIOR OF CDTE AND (CD,ZN)TE SINGLE-CRYSTALS BETWEEN 200-DEGREES-C AND 600-DEGREES-C
RAI, RS
MAHAJAN, S
MICHEL, DJ
SMITH, HH
MCDEVITT, S
JOHNSON, CJ
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 10 (03): : 219 - 225
[50] DISLOCATION-STRUCTURES IN IN-DOPED AND UNDOPED GAAS DEFORMED AT 700-1100-DEGREES-C
RAI, RS
GURUSWAMY, S
FABER, KT
HIRTH, JP
[J]. PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1989, 60 (03): : 339 - 353

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