Defects in epitaxial layers of compound semiconductors grown by OMVPE and MBE techniques

被引：6

作者：

Mahajan, S ^{[1
]}

机构：

[1] Arizona State Univ, Dept Chem Bio & Mat Engn, Tempe, AZ 85287 USA

来源：

PROGRESS IN MATERIALS SCIENCE | 1997年 / 42卷 / 1-4期

关键词：

D O I：

10.1016/S0079-6425(97)00023-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：341 / 355

页数：15

共 29 条

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