DEFORMATION-BEHAVIOR OF CDTE AND (CD,ZN)TE SINGLE-CRYSTALS BETWEEN 200-DEGREES-C AND 600-DEGREES-C

被引：18

作者：

RAI, RS

MAHAJAN, S

MICHEL, DJ

SMITH, HH

MCDEVITT, S

JOHNSON, CJ

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] II-VI INC,SAXONBURG,PA 16056

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1991年 / 10卷 / 03期

关键词：

D O I：

10.1016/0921-5107(91)90129-J

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The deformation behavior of CdTe and (Cd,Zn)Te single crystals oriented for single slip has been investigated in the temperature range 200-600-degrees-C. The addition of 4.5 at.% Zn increases the yield strength by about eight times over that of CdTe crystals. Further, in both cases the yield strengths are nearly temperature independent above 300-degrees-C. Arguments have been developed to rationalize these observations. Deformed structures have been evaluated by transmission electron microscopy. Parallel sets of dislocations, dislocation dipoles, loops, tangles and networks are observed in the deformed samples. In addition, the (Cd,Zn)Te samples deformed at 200-degrees-C show profuse twinning. The evolution of the deformed structures has been discussed in the light of earlier studies pertaining to the elemental and III-V compound semiconductors. Also, the formation of twins is rationalized.

引用

页码：219 / 225

页数：7

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