Solvothermal/hydrothermal route to semiconductor nanowires

被引:103
作者
Zou, Guifu [1 ]
Li, Hui
Zhang, Yuanguang
Xiong, Kan
Qian, Yitai
机构
[1] Univ Sci & Technol China, Hefei Natl Lab Phys Sci Microscale, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, Dept Chem, Hefei 230026, Anhui, Peoples R China
关键词
D O I
10.1088/0957-4484/17/11/S14
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The solvothermal/hydrothermal method is an important technology for producing semiconductor nanowires at low temperature. This paper presents an integrated discussion of nanowire growth, mainly from four aspects in the solvothermal/ hydrothermal process. These aspects, including materials with highly anisotropic crystal structures, coordination directing/ mixed solvents, surfactants/ capping reagents, and reaction at relatively high temperature, have a key effect on nanowire formation in the solvothermal/ hydrothermal process. These factors have instructional significance for nanowire synthesis and research of their growth process in the future.
引用
收藏
页码:S313 / S320
页数:8
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