First III-V-nitride-based violet laser diodes

被引：47

作者：

Nakamura, S

机构：

[1] Dept. of Research and Development, Nichia Chemical Industries, Ltd., Kaminaka, Anan, Tokushima 774

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

关键词：

D O I：

10.1016/S0022-0248(96)00503-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InGaN multi-quantum-well (MQW) structure laser diodes (LDs) were grown by metalorganic chemical vapor deposition on a sapphire substrate with (<11(2)over bar 0>) orientation (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (<1(1)over bar 02>) orientation (R-face). The structure of the LDs was an InGaN MQW/GaN/AlGaN separate confinement heterostructure (SCH). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs showed strong stimulated emission at a wavelength of 415.3 nm under pulsed current injection above 360 mA at room temperature. The laser threshold current density was 6 kA/cm(2). As a maximum characteristic temperature of the threshold current, T-0= 313 K was obtained for the InGaN MQW/GaN/AlGaN SCH LDs.

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页码：11 / 15

页数：5

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