Gate-bias stress in amorphous oxide semiconductors thin-film transistors

被引：208

作者：

Lopes, M. E. ^{[1
]}

Gomes, H. L. ^{[1
]}

Medeiros, M. C. R. ^{[1
]}

Barquinha, P. ^{[2
,3
]}

Pereira, L. ^{[2
,3
]}

Fortunato, E. ^{[2
,3
]}

Martins, R. ^{[2
,3
]}

Ferreira, I. ^{[2
,3
]}

机构：

[1] Univ Algarve, CEOT, P-8005139 Faro, Portugal

[2] Univ Nova Lisboa, Dept Mat Sci, CENIMAT, I3N, P-2829516 Caparica, Portugal

[3] Univ Nova Lisboa, CEMOP, Fac Sci & Technol, P-2829516 Caparica, Portugal

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 06期

关键词：

amorphous semiconductors; gallium compounds; indium compounds; plasma CVD; thin film transistors; zinc compounds; PERFORMANCE; SHIFTS; TIME;

D O I：

10.1063/1.3187532

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quantitative study of the dynamics of threshold-voltage shifts with time in gallium-indium zinc oxide amorphous thin-film transistors is presented using standard analysis based on the stretched exponential relaxation. For devices using thermal silicon oxide as gate dielectric, the relaxation time is 3x10(5) s at room temperature with activation energy of 0.68 eV. These transistors approach the stability of the amorphous silicon transistors. The threshold voltage shift is faster after water vapor exposure suggesting that the origin of this instability is charge trapping at residual-water-related trap sites.

引用

收藏

页数：3

相关论文

共 20 条

[1] The effect of deposition conditions and annealing on the performance of high-mobility GIZO TFTs [J].

Barquinha, P. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. ;

Fortunato, E. .

ELECTROCHEMICAL AND SOLID STATE LETTERS, 2008, 11 (09) :H248-H251

[2] Toward High-Performance Amorphous GIZO TFTs [J].

Barquinha, P. ;

Pereira, L. ;

Goncalves, G. ;

Martins, R. ;

Fortunato, E. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (03) :H161-H168

[3] Efficient suppression of charge trapping in ZnO-based transparent thin film transistors with novel Al2O3/HfO2/Al2O3 structure [J].

Chang, Seongpil ;

Song, Yong-Won ;

Lee, Sanggyu ;

Lee, Sang Yeol ;

Ju, Byeong-Kwon .

APPLIED PHYSICS LETTERS, 2008, 92 (19)

[4] Charge trapping and detrapping characteristics in amorphous InGaZnO TFTs under static and dynamic stresses [J].

Cho, In-Tak ;

Lee, Jeong-Min ;

Lee, Jong-Ho ;

Kwon, Hyuck-In .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2009, 24 (01)

[5] Unification of the time and temperature dependence of dangling-bond-defect creation and removal in amorphous-silicon thin-film transistors [J].

Deane, SC ;

Wehrspohn, RB ;

Powell, MJ .

PHYSICAL REVIEW B, 1998, 58 (19) :12625-12628

[6] Bias-induced threshold voltages shifts in thin-film organic transistors [J].

Gomes, HL ;

Stallinga, P ;

Dinelli, F ;

Murgia, M ;

Biscarini, F ;

de Leeuw, DM ;

Muck, T ;

Geurts, J ;

Molenkamp, LW ;

Wagner, V .

APPLIED PHYSICS LETTERS, 2004, 84 (16) :3184-3186

[7]

GOUMLRRN P, 2007, APPL PHYS LETT, V90, DOI DOI 10.1063/1.2458457

[8] Performance of microbolometer focal plane arrays under varying pressure [J].

He, X ;

Karunasiri, G ;

Mei, T ;

Zeng, WJ ;

Neuzil, P ;

Sridhar, U .

IEEE ELECTRON DEVICE LETTERS, 2000, 21 (05) :233-235

[9] Origin of threshold voltage instability in indium-gallium-zinc oxide thin film transistors [J].

Jeong, Jae Kyeong ;

Yang, Hui Won ;

Jeong, Jong Han ;

Mo, Yeon-Gon ;

Kim, Hye Dong .

APPLIED PHYSICS LETTERS, 2008, 93 (12)

[10] Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display [J].

Kwon, Jang Yeon ;

Son, Kyoung Seok ;

Jung, Ji Sim ;

Kim, Tae Sang ;

Ryu, Myung Kwan ;

Park, Kyung Bae ;

Yoo, Byung Wook ;

Kim, Jung Woo ;

Lee, Young Gu ;

Park, Kee Chan ;

Lee, Sang Yoon ;

Kim, Jong Min .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (12) :1309-1311