Bottom-Gate Gallium Indium Zinc Oxide Thin-Film Transistor Array for High-Resolution AMOLED Display

被引：249

作者：

Kwon, Jang Yeon ^{[1
]}

Son, Kyoung Seok ^{[1
]}

Jung, Ji Sim ^{[1
]}

Kim, Tae Sang ^{[1
]}

Ryu, Myung Kwan ^{[1
]}

Park, Kyung Bae ^{[1
]}

Yoo, Byung Wook ^{[1
]}

Kim, Jung Woo ^{[1
]}

Lee, Young Gu ^{[1
]}

Park, Kee Chan ^{[2
]}

Lee, Sang Yoon ^{[1
]}

Kim, Jong Min ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Display Device & Proc Lab, Yongin 446712, South Korea

[2] Konkuk Univ, Dept Elect Engn, Seoul 143701, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2008年 / 29卷 / 12期

关键词：

Active-matrix organic light-emitting diode (AMOLED); Ga2O3-In2O3-ZnO (GIZO); oxygen supply; thin-film transistor (TFT); threshold voltage;

D O I：

10.1109/LED.2008.2006637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The fabrication process and the characteristics of bottom-gate Ga2O3-In2O3-ZnO (GIZO) thin-film transistors (TFTs) are reported in detail. Experimental results show that oxygen supply during the deposition of GIZO active layer and silicon oxide passivation layer controls the threshold voltage of the TFT. The field-effect mobility and the threshold voltage of the GIZO TFT fabricated under the optimum process conditions are 2.6 cm(2)/V center dot s and 3.8 V, respectively. A 4-in QVGA active-matrix organic light-emitting diode display driven by the GIZO TFTs without any compensation circuit in the pixel is successfully demonstrated.

引用

页码：1309 / 1311

页数：3

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