Structure and surface morphology of highly conductive RuO2 films grown on MgO by oxygen-plasma-assisted molecular beam epitaxy

被引：34

作者：

Gao, Y ^{[1
]}

Bai, G ^{[1
]}

Liang, Y ^{[1
]}

Dunham, GC ^{[1
]}

Chambers, SA ^{[1
]}

机构：

[1] ARGONNE NATL LAB,ARGONNE,IL 60439

来源：

JOURNAL OF MATERIALS RESEARCH | 1997年 / 12卷 / 07期

关键词：

D O I：

10.1557/JMR.1997.0253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Metallic RuO2(110) thin films were grown by oxygen-plasma-assisted molecular beam epitaxy (MBE) on MgO(100) and (110) at 425 degrees C. RuO2 films on MgO(100) are epitaxial with two variants, while RuO2 films on MgO(110) are highly oriented with the (110) face parallel to the substrate surface. The two variants in the RuO2(110) epitaxial films resulted in a twofold mosaic microstructure, The RuO2(110) epitaxial films are very smooth and exhibit a low resistivity of similar to 36 mu Omega-cm. In contrast, the RuO2(110) textured films are very rough, and consist of small grains with a poor in-plane alignment. A slight higher resistivity (49 mu Omega-cm) was found for the RuO2(110) textured films grown on MgO(110).

引用

页码：1844 / 1849

页数：6

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