Patterned Growth of Horizontal ZnO Nanowire Arrays

被引:94
作者
Xu, Sheng [1 ]
Ding, Yong [1 ]
Wei, Yaguang [1 ]
Fang, Hao [1 ]
Shen, Yue [1 ]
Sood, Ashok K. [2 ]
Polla, Dennis L. [3 ]
Wang, Zhong Lin [1 ]
机构
[1] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA
[2] Magnolia Opt Technol Inc, Woburn, MA 01801 USA
[3] DARPA MTO, Arlington, VA 22203 USA
关键词
NANORODS; TEMPERATURE;
D O I
10.1021/ja902119h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report an approach to fabricating patterned horizontal ZnO nanowire arrays with a high degree of control over their dimensionality, orientation, and uniformity. Our method combines electron beam lithography and a low temperature hydrothermal decomposition. This approach opens up possibilities to fabricate ZnO NW array based strain and force sensors, two-dimensional photonic crystals, integrated circuit interconnects, and alternative current nanogenerators.
引用
收藏
页码:6670 / +
页数:3
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