A ZnO nanowire vacuum pressure sensor

被引:51
作者
Chang, Shoou-Jinn [1 ,2 ]
Hsueh, Ting-Jen [1 ,2 ]
Hsu, Cheng-Liang [3 ]
Lin, Yan-Ru [4 ]
Chen, I-Cherng [5 ]
Huang, Bohr-Ran [6 ]
机构
[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Inst Microelect, Tainan 70101, Taiwan
[2] Natl Cheng Kung Univ, Dept Elect Engn, Adv Optoelect Technol Ctr, Ctr Micro Nano Sci & Technol, Tainan 70101, Taiwan
[3] Natl Univ Tainan, Dept Elect Engn, Tainan 700, Taiwan
[4] Mingchi Univ Technol, Dept Mat Engn, Taipei 243, Taiwan
[5] Ind Technol Res Inst S, Micro Syst Technol Ctr, Tainan 709, Taiwan
[6] Natl Taiwan Univ Sci & Technol, Grad Inst Electroopt Engn, Dept Elect Engn, Taipei 106, Taiwan
关键词
D O I
10.1088/0957-4484/19/9/095505
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this study, we report the growth and characterization of lateral ZnO nanowires (NWs) on ZnO: Ga/glass templates. Using x-ray diffraction and micro-Raman spectroscopy, it was found that crystal quality of the as-grown ZnO NWs is good. It was also found that the average length and average diameter of the laterally grown ZnO NWs were 5 mu m and 30 nm, respectively. A vacuum pressure sensor was then fabricated using a single NW bridging across two electrodes. By measuring the current-voltage characteristics of the samples at low pressure, we found that the currents were of 17, 34.28, 57.37 and 96.06 nA for the ZnO NW measured at 1 x 10(-3) Torr, 1 x 10(-4) Torr, 3 x 10(-5) Torr and 5 x 10(-6) Torr, respectively. These values suggest that the laterally grown ZnO NWs prepared in this study are potentially useful for vacuum pressure sensing.
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页数:4
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