Ultrathin silicon dioxide layers with a low leakage current density formed by chemical oxidation of Si

被引:85
作者
Asuha
Kobayashi, T
Maida, O
Inoue, M
Takahashi, M
Todokoro, Y
Kobayashi, H
机构
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
[2] Japan Sci & Technol Corp, CREST, Osaka 5670047, Japan
[3] Matsushita Elect Ind Co Ltd, Semicond Co, Technol Liaison Off, Minato Ku, Tokyo 1058586, Japan
关键词
D O I
10.1063/1.1517723
中图分类号
O59 [应用物理学];
学科分类号
摘要
Chemical oxidation of Si by use of azeotrope of nitric acid and water can form 1.4-nm-thick silicon dioxide layers with a leakage current density as low as those of thermally grown SiO2 layers. The capacitance-voltage (C-V) curves for these ultrathin chemical SiO2 layers have been measured due to the low leakage current density. The leakage current density is further decreased to similar to1/5 (cf. 0.4 A/cm(2) at the forward gate bias of 1 V) by post-metallization annealing at 200degreesC in hydrogen. Photoelectron spectroscopy and C-V measurements show that this decrease results from (i) increase in the energy discontinuity at the Si/SiO2 interface, and (ii) elimination of Si/SiO2 interface states and SiO2 gap states. (C) 2002 American Institute of Physics.
引用
收藏
页码:3410 / 3412
页数:3
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