Direct wafer bonding and transfer of 10-μm-thick magnetic garnet films onto semiconductor surfaces

被引：19

作者：

Izuhara, T ^{[1
]}

Levy, M ^{[1
]}

Osgood, RM ^{[1
]}

机构：

[1] Columbia Univ, Microelect Sci Labs, New York, NY 10027 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 10期

关键词：

D O I：

10.1063/1.126003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Bonding between liquid-phase-epitaxy-grown yttrium iron garnet films and various semiconductors is realized by direct wafer bonding. The semiconductor substrates can serve as a platform for integration or as a "handle" platform for the transfer of mesoscopic garnet films. To effect film transfer, a sacrificial layer is formed in the garnet by deep ion implantation prior to bonding. Shear stress at the garnet/semiconductor interface can be controlled by temperature tuning during the bonding process. A debonding temperature threshold of similar to 400 degrees C is found and related to the interfacial thermal stress due to difference in thermal expansion coefficients of the bonded materials. Film separation is realized by the application of thermally induced stress at the sacrificial layer. (C) 2000 American Institute of Physics. [S0003-6951(00)01510-2].

引用

页码：1261 / 1263

页数：3

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