共 7 条
FE-12:: A front-end readout chip designed in a commercial 0.25-μm process for the ATLAS pixel detector at LHC
被引:19
作者:
Blanquart, L
[1
]
Richardson, J
Einsweiler, K
Fischer, P
Mandelli, E
Meddeler, G
Peric, I
机构:
[1] Lawrence Berkeley Natl Lab, Berkeley, CA 94720 USA
[2] Univ Mannheim, D-68165 Mannheim, Germany
[3] Univ Bonn, Inst Phys, D-53115 Bonn, Germany
关键词:
active bias distribution;
hybrid pixel sensor;
leakage current compensation;
multichip module;
shielding technique;
threshold adjustment;
time over threshold;
D O I:
10.1109/TNS.2004.832895
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A new front-end chip (FE-12) has been developed for the ATLAS pixel detector at the future Large Hadron Collider (LHC) accelerator facility of the European Laboratory for Particle Physics (CERN). This chip has been submitted in a commercial 0.25-mum CMOS process using special layout techniques for radiation tolerance. It comprises 2880 pixels arranged into 18 columns of 160 channels. Each pixel element of dimension 50 mum x 400 mum is composed of a charge-sensitive amplifier followed by a fast discriminator with a detection threshold adjustable within a range of 0-6000 electrons and slow control logic incorporating a wired-hit-Or, preamplifier-kill, readout mask, and automatic threshold tuning circuitry. There are two single-event-upset (SEU)-tolerant DACs for reducing threshold (7-b) and recovery-time (3-b) mismatches from pixel to pixel along with digital hit emulation and a differential readout circuit aimed at transporting time-stamped data from each pixel to buffers at the bottom of the chip. In comparison to previous generations of the ATLAS pixel chip, FE-I2 incorporates many new features such as embedded "smart" decoupling capacitances, long-term overvoltage protection, linear regulators, a capacitance calibration charge-pump circuit, a power-on reset', and a leakage current monitoring circuit. Its predecessor (FE-I1) has been demonstrated to operate correctly after ionizing radiation doses exceeding 50 Mrad (SiO2). Special techniques employed for digital pick-up reduction are also described.
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页码:1358 / 1364
页数:7
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