Electron-excited luminescence of SiC surfaces and interfaces

被引:15
作者
Brillson, LJ
Tumakha, S
Okojie, RS
Zhang, M
Pirouz, P
机构
[1] Ohio State Univ, Dreese Lab 205, Columbus, OH 43210 USA
[2] NASA, Glenn Res Ctr, Cleveland, OH 44135 USA
[3] Case Western Reserve Univ, Dept Mat Sci & Engn, Cleveland, OH 44106 USA
关键词
D O I
10.1088/0953-8984/16/17/015
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Recent advances in probing the electronic structure of SiC with electron-excited luminescence techniques reveal the presence of localized electronic states near its surfaces and interfaces. These localized states form not only as a result of interface chemical bonding but also due to the formation of new lattice polytypes. Such electronic features are sensitive to the conditions under which the SiC is processed, as well as the application of electrical or mechanical stress. These localized changes on a nanometre scale provide a new perspective to Schottky barrier formation, band alignment, and polytypism in SiC as well as its performance in electronic devices.
引用
收藏
页码:S1733 / S1754
页数:22
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