Epitaxial growth of CuGaS2 on Si(111)

被引：25

作者：

Metzner, H

Hahn, T

Cieslak, J

Grossner, U

Reislöhner, U

Witthuhn, W

Goldhahn, R

Eberhardt, J

Gobsch, G

Kräusslich, J

机构：

[1] Univ Jena, Inst Festkorperphys, D-07743 Jena, Germany

[2] Tech Univ Ilmenau, Inst Phys, D-98684 Ilmenau, Germany

[3] Univ Jena, Inst Opt & Quantenelekt, D-07743 Jena, Germany

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 01期

关键词：

D O I：

10.1063/1.1492003

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We demonstrate the direct heteroepitaxial growth of the ternary semiconductor CuGaS2 on Si(111) substrates by means of molecular beam epitaxy. X-ray diffraction data prove the epitaxial growth of the CuGaS2 films in the highly ordered chalcopyrite structure. Using photoluminescence, we are able to detect strong excitonic emissions up to room temperature, while photocurrent spectra reveal the A, B, and C valence-to-conduction-band transitions as they are typical for the tetragonal chalcopyrite structure. (C) 2002 American Institute of Physics.

引用

页码：156 / 158

页数：3

共 18 条

[1] PIEZOELECTRIC NONLINEAR OPTIC CUGAS2 AND CUINS2 CRYSTAL-STRUCTURE - SUBLATTICE DISTORTION IN A1BIIIC2VI AND AIIBIVC2V TYPE CHALCOPYRITES [J].