Lithographic evaluation of the EUV Engineering Test Stand

被引:11
作者
Lee, SH [1 ]
Tichenor, DA [1 ]
Ballard, WP [1 ]
Bernardez, LJ [1 ]
Goldsmith, JEM [1 ]
Haney, SJ [1 ]
Jefferson, KL [1 ]
Johnson, TA [1 ]
Leung, AH [1 ]
O'Connell, DJ [1 ]
Replogle, WC [1 ]
Wronosky, JB [1 ]
Blaedel, K [1 ]
Naulleau, P [1 ]
Goldberg, KA [1 ]
Gullikson, EM [1 ]
Chapman, HN [1 ]
Wurm, S [1 ]
Panning, E [1 ]
Yan, PY [1 ]
Zhang, GJ [1 ]
Bjorkholm, JE [1 ]
Kubiak, GD [1 ]
Sweeney, DW [1 ]
Attwood, D [1 ]
Gwyn, CW [1 ]
机构
[1] Intel Corp, Santa Clara, CA 95052 USA
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES VI, PTS 1 AND 2 | 2002年 / 4688卷
关键词
extreme ultraviolet; lithography; laser-produced plasma; flare; aerial image contrast; resist resolution;
D O I
10.1117/12.472300
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Static and scanned images of 100 nm dense features were successfully obtained with a developmental set of projection optics (lambda/14 projection optics box or POB 1) and a 500W drive laser laser-produced-plasma (LPP) source in the Engineering Test Stand (ETS). The ETS, configured with POB 1, has been used to understand system performance and acquire lithographic learning which will be used in the development of EUV high volume manufacturing tools. The printed static images for dense features below 100 nm with the improved LPP source (500W drive laser) are comparable to those obtained with the low power LPP source (40W drive laser), while the exposure time was decreased by more than 30x. Image quality comparisons between the static and scanned images with the improved LPP source are also presented. Lithographic evaluation of the ETS includes flare and contrast measurements. By using a resist clearing method, the flare and aerial image contrast of POB1 have been measured, and the results have been compared to analytical calculations and computer simulations.
引用
收藏
页码:266 / 276
页数:3
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