A vertical-cavity surface-emitting laser applied to a 0.8-mu m NMOS driver

被引：24

作者：

Mathine, DL ^{[1
]}

Droopad, R ^{[1
]}

Maracas, GN ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT ELECT ENGN,CTR SOLID STATE ELECT RES,TEMPE,AZ 85287

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 07期

基金：

美国国家科学基金会;

关键词：

CMOS integrated circuits; hybrid integrated circuit fabrication; integrated circuit fabrication; integrated optoelectronics; optical interconnections; semiconductor device fabrication; surface-emitting lasers;

D O I：

10.1109/68.593327

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An optoelectronic integrated circuit (OEIC) composed of a vertical-cavity surface-emitting laser (VCSEL) appliqued to an NMOS drive circuit was fabricated to form an optical link from the CMOS chip, A custom NMOS circuit was designed and fabricated through the MOSIS foundry service in a standard 0.8-mu m CMOS process, InGaAs quantum-well VCSEL's were grown, fabricated and tested on an n-type GaAs substrate, Next, the VCSEL's underwent a substrate removal technique and were appliqued to the NMOS circuitry, The OEIC was tested at the chip level and showed an electrical to optical conversion efficiency of 1.09 mW/V. Modulation results are also discussed.

引用

页码：869 / 871

页数：3

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