Selectively oxidized GaAs MESFET's transferred to a Si substrate

被引:2
作者
Wheeler, CB [1 ]
Mathine, DL [1 ]
Johnson, SR [1 ]
Maracas, GN [1 ]
Allee, DR [1 ]
机构
[1] MOTOROLA PCRL,TEMPE,AZ 85284
基金
美国国家科学基金会;
关键词
D O I
10.1109/55.563308
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A novel method to electrically isolate grafted integrated GaAs devices from a conductive host substrate is demonstrated, An array of GaAs MESFET's is fabricated on a GaAs substrate and transferred to a Si substrate using a substrate removal process, The MESFET's contain a buried oxide layer under the channel region of each transistor that is formed by the thermal oxidation of AlAs. The purpose of this oxide layer is to provide electrical isolation from the conductive host substrate, Electrical evaluations are performed that show the transistors are fully functional after the oxidation and transfer processes and that the buried oxide does provide electrical isolation from the conductive host substrate.
引用
收藏
页码:138 / 140
页数:3
相关论文
共 10 条
  • [1] ASHBY C, 1996, TMS C U CAL SANT BAR
  • [2] OPTICAL MIXING IN EPITAXIAL LIFT-OFF PSEUDOMORPHIC HEMTS
    BHATTACHARYA, D
    BAL, PS
    FETTERMAN, HR
    STREIT, D
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1995, 7 (10) : 1171 - 1173
  • [3] CHIO HK, 1984, IEEE ELECT DEVICE LE, V5, P207
  • [4] MONOLITHIC INTEGRATION OF SI MOSFETS AND GAAS-MESFETS
    CHOI, HK
    TURNER, GW
    TSAUR, BY
    [J]. IEEE ELECTRON DEVICE LETTERS, 1986, 7 (04) : 241 - 243
  • [5] INTEGRATION OF A SINGLE VERTICAL-CAVITY SURFACE-EMITTING LASER ONTO A CMOS INVERTER CHIP
    DARYANANI, S
    FATHOLLAHNEJAD, H
    MATHINE, DL
    DROOPAD, R
    KUBES, A
    MARACAS, GN
    [J]. ELECTRONICS LETTERS, 1995, 31 (10) : 833 - 834
  • [6] VERTICAL-CAVITY SURFACE-EMITTING LASERS INTEGRATED ONTO SILICON SUBSTRATES BY PDGE CONTACTS
    FATHOLLAHNEJAD, H
    MATHINE, DL
    DROOPAD, R
    MARACAS, GN
    DARYANANI, S
    [J]. ELECTRONICS LETTERS, 1994, 30 (15) : 1235 - 1236
  • [7] HIGH-QUALITY GAAS-MESFETS GROWN ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    MORKOC, H
    PENG, CK
    HENDERSON, T
    KOPP, W
    FISCHER, R
    ERICKSON, LP
    LONGERBONE, MD
    YOUNGMAN, RC
    [J]. IEEE ELECTRON DEVICE LETTERS, 1985, 6 (07) : 381 - 383
  • [8] FABRICATION OF GAAS-MESFET RING OSCILLATOR ON MOCVD GROWN GAAS/SI(100) SUBSTRATE
    NONAKA, T
    AKIYAMA, M
    KAWARADA, Y
    KAMINISHI, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1984, 23 (12): : L919 - L921
  • [9] EPITAXIAL LIFT-OFF GAAS HEMTS
    SHAH, DM
    CHAN, WK
    CANEAU, C
    GMITTER, TJ
    SONG, JI
    HONG, BP
    MICELLI, PF
    DEROSA, F
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1995, 42 (11) : 1877 - 1881
  • [10] Monolithic integration of a GaAs MESFET with a resonant cavity LED using a buried oxide layer
    Wheeler, C
    Daryanani, S
    Mathine, DL
    Maracas, GN
    Allee, DR
    [J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 1997, 9 (02) : 194 - 196