A precise new method to evaluate Monte Carlo simulations of electron transport in semiconductors

被引：11

作者：

Urban, M ^{[1
]}

Siegrist, MR ^{[1
]}

Asadauskas, L ^{[1
]}

Raguotis, R ^{[1
]}

Brazis, R ^{[1
]}

机构：

[1] LITHUANIA ACAD SCI,INST SEMICOND PHYS,LT-232600 VILNIUS,LITHUANIA

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 12期

关键词：

D O I：

10.1063/1.117482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Monte Carlo simulations of the electron drift response to an ac-electric field are used to calculate the power dependent third harmonic generation efficiency for far-infrared radiation. The results are compared with far-infrared frequency tripling experiments. It is shown that the nonlinear optical properties are much more sensitive to parameter changes in the Monte Carlo simulation than conventional drift velocity results. Hence, this is a sensitive method to test Monte Carlo transport simulations. (C) 1996 American Institute of Physics.

引用

页码：1776 / 1778

页数：3

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