Extended 0.13 μm CMOS technology for the ultra high-speed and MS/RF application segments

被引：6

作者：

Chang, CS ^{[1
]}

Chao, CP ^{[1
]}

Leung, YK ^{[1
]}

Lin, CH ^{[1
]}

Hsu, HM ^{[1
]}

Wang, YP ^{[1
]}

Chang, SY ^{[1
]}

Chiu, TH ^{[1
]}

Shyu, JS ^{[1
]}

Wu, CC ^{[1
]}

Wang, CH ^{[1
]}

Chang, RY ^{[1
]}

Chen, CW ^{[1
]}

Huang, CF ^{[1
]}

Chen, CH ^{[1
]}

Chen, SH ^{[1
]}

Yeh, TH ^{[1
]}

Cheng, JY ^{[1
]}

Liaw, JJ ^{[1
]}

Chu, YL ^{[1
]}

Ong, TC ^{[1
]}

Yu, MC ^{[1
]}

Yu, CH ^{[1
]}

Lin, IJ ^{[1
]}

Tao, HJ ^{[1
]}

Liang, MS ^{[1
]}

See, YC ^{[1
]}

Diaz, CH ^{[1
]}

Sun, YC ^{[1
]}

机构：

[1] Taiwan Semicond Mfg Co, Hsinchu, Taiwan

来源：

2002 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2002年

关键词：

D O I：

10.1109/VLSIT.2002.1015391

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper introduces new technology features to support ultra high-speed and MS/RF applications incorporated into a leading-edge fully manufacturable 0.13 mum CMOS foundry technology [I]. New core devices with 15.5 Angstrom and nominal 75 nm physical gate lengths support at least 10% performance improvement with respect to prior release [1]. These devices offer the best I-off-I-dsat performance reported so far for 1.2V applications. To support highspeed I/O standards, additional 1.8V-3.2 Angstrom I/O devices are integrated with the 15.5 Angstrom transistors. Leading-edge passive elements for MS/RF applications are reported in this work. Advanced Cu/low-k back end process integration that can support up to nine layers of metal is also demonstrated.

引用

页码：68 / 69

页数：2

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