Surface nitridation of nickel using hydrazoic acid (HN3) and nitrogen ion implantation

被引：10

作者：

Han, KP ^{[1
]}

Fairbrother, DH ^{[1
]}

机构：

[1] Johns Hopkins Univ, Dept Chem & Mat Sci & Engn, Baltimore, MD 21218 USA

来源：

APPLIED SURFACE SCIENCE | 2002年 / 195卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

ion implantation; nickel; hydrazoic acid; nitride; AES;

D O I：

10.1016/S0169-4332(02)00560-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Auger electron spectroscopy (AES), in conjunction with argon ion sputtering/depth profiling have been used to study the nature of nickel substrates nitrided by chemical modification with hydrazoic acid (HN3) and nitrogen ion implantation. Nickel-nitrogen bond formation was evidenced from both treatment strategies, although a thicker nitrided overlayer was observed during nitrogen ion implantation. For ion implantation, the rate of surface nitridation was found to be independent of ion energy in the range of 2-5 keV, although at higher beam energies thicker nitride films were produced. The Ni-N bond was stable under vacuum conditions until approximate to650 K. The influence of the surface chemical composition on the N(KLL) AES transition in metal-nitrogen (M-N) containing compounds is also illustrated for Ni, Al, and NiAl substrates exposed to HN3. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：229 / 235

页数：7

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